Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11204860
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Filing Dt:
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08/15/2005
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Publication #:
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Pub Dt:
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12/07/2006
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Inventor:
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Fwu-Iuan Hshieh
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Title:
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High density trench MOSFET with low gate resistance and reduced source contact space
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 1 SILICON DRIVE |
| SAMA JAYA FREE INDUSTRIAL ZONE |
| 93350 KUCHING, SARAWAK, MALAYSIA |
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| BO-IN LIN |
| 13445 MANDOLI DRIVE |
| LOS ALTOS HILLS, CA 94022 |
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Assignment:
2
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CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE PREVIOUSLY RECORDED ON REEL 016896 FRAME 0049. ASSIGNOR(S) HEREBY CONFIRMS THE TO CORRECT THE ASSIGNEE FROM "M-MOS SDN. BHD." TO "M-MOS SEMICONDUCTOR SDN. BHD.".
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| 1 SILICON DRIVE, SAMA JAYA FREE INDUSTRIAL ZONE |
| 93350 KUCHING, SARAWAK, MALAYSIA |
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| BO-IN LIN |
| 13445 MANDOLI DRIVE |
| LOS ALTOS HILLS, CA 94022 |
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