Patent Assignment Abstract of Title
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Total Assignments:
2
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11885834
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Filing Dt:
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10/05/2007
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Publication #:
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Pub Dt:
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07/10/2008
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Inventor:
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Hyun-Sang Hwang
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Title:
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High Pressure Hydrogen Annealing for Mosfet
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 1, ORYONG-DONG, BUK-GU |
| GWANGJU 500-712, KOREA, REPUBLIC OF |
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| NATH & ASSOCIATES |
| 112 SOUTH WEST STREET |
| ALEXANDRIA, VA 22314 |
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Assignment:
2
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TO CORRECT THE APPLICANT ERROR REGARDING THE SPELLING OF THE INVENTOR IN BOX 1, PREVIOUSLY RECORDED ON OCTOBER 5, 2007 AT REEL 020009 AND FRAME 0600
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| 1, ORYONG-DONG, BUK-GU |
| GWANGJU, KOREA, REPUBLIC OF 500-712 |
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| GARY M. NATH |
| 112 SOUTH WEST STREET |
| ALEXANDRIA, VA 22314 |
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