Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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11815181
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Filing Dt:
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09/06/2007
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Publication #:
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Pub Dt:
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08/14/2008
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Inventors:
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Hiroshi Fujioka, Atsushi Kobayashi
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Title:
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Method for Producing Gan Film, Semiconductor Device, Method for Generating Thin Film of Nitride of Group III Element and Semiconductor Device Having Thin Film of Nitride of Group III Element
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 2-1, SAKADO 3-CHOME, TAKATSU-KU, KAWASAKI-SHI |
| KANAGAWA, JAPAN 213-0012 |
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| HONGO 7-CHOME, BUNKYO-KU |
| TOKYO, JAPAN 113-0033 |
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| THOMAS C. BASSO |
| BELL, BOYD & LLOYD LLP, P.O. BOX 1135 |
| CHICAGO, IL 60690-1135 |
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