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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
Issue Dt:
10/18/2011
Application #:
11804927
Filing Dt:
05/21/2007
Publication #:
Pub Dt:
11/27/2008
Inventors:
Chun-Feng Nieh, Keh-Chiang Ku, Nai-Han Cheng, Li-Te S. Lin, Chi-Chun Chen
Title:
SHALLOW JUNCTION FORMATION AND HIGH DOPANT ACTIVATION RATE OF MOS DEVICES
Assignment: 1
Reel/Frame:
019525/0380Recorded: 07/06/2007Pages: 4
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
05/18/2007
Exec Dt:
05/18/2007
Exec Dt:
05/18/2007
Exec Dt:
05/18/2007
Exec Dt:
05/18/2007
Assignee:
NO. 8, LI-HSIN RD. 6
SCIENCE-BASED INDUSTRIAL PARK
HSIN-CHU, TAIWAN 300-77
Correspondent:
SLATER & MATSIL, L.L.P.
17950 PRESTON ROAD, SUITE 1000
DALLAS, TX 75252

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