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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
11823756
Filing Dt:
06/28/2007
Publication #:
Pub Dt:
01/01/2009
Inventors:
Soo Jin Chua, Haryono Hartono, Chew Beng Soh
Title:
Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)
Assignment: 1
Reel/Frame:
019709/0599Recorded: 08/17/2007Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
06/19/2007
Exec Dt:
06/19/2007
Exec Dt:
06/19/2007
Assignee:
21 LOWER KENT RIDGE ROAD
SINGAPORE, SINGAPORE
Correspondent:
SAILE ACKERMAN LLC
28 DAVIS AVENUE
POUGHKEEPSIE, NY 12603

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