Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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17107091
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Filing Dt:
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11/30/2020
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Publication #:
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Pub Dt:
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11/04/2021
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Inventors:
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Sung-Hsin YANG, Jung-Chi JENG, Ru-Shang HSIAO
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Title:
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SOURCE/DRAIN EPITAXIAL STRUCTURES FOR HIGH VOLTAGE TRANSISTORS
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| NO. 8, LI-HSIN RD. 6 |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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| STERNE, KESSLER, GOLDSTEIN & FOX P.L.L.C. |
| 1100 NEW YORK AVE., N.W. |
| WASHINGTON, DC 20005 |
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