Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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Issue Dt:
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02/27/2024
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Application #:
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18064726
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Filing Dt:
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12/12/2022
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Publication #:
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Pub Dt:
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04/06/2023
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Inventors:
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Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen, Ming-Ching Chang
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Title:
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Residue-Free Metal Gate Cutting For Fin-Like Field Effect Transistor
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Assignment:
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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8, LI-HSIN RD. 6 |
HSINCHU SCIENCE PARK |
HSINCHU, TAIWAN 300-78 |
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HAYNES AND BOONE, LLP (24061) IP SECTION |
2323 VICTORY AVENUE |
SUITE 700 |
DALLAS, TX 75219 |
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05/30/2024 09:17 AM
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