Patent Assignment Abstract of Title
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Total Assignments:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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18066354
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Filing Dt:
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12/15/2022
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Publication #:
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Pub Dt:
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04/20/2023
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Inventors:
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Chansyun David Yang, Fang-Wei Lee, Li-Te Lin, Han-Yu Lin, Tze-Chung Lin, Fo-Ju Lin et al
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Title:
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Inner Spacer Formation in Multi-Gate Transistors
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Assignment:
1
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ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
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| 8, LI-HSIN RD. 6 |
| HSINCHU SCIENCE PARK |
| HSINCHU, TAIWAN 300-78 |
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| HAYNES AND BOONE, LLP |
| 2323 VICTORY AVENUE |
| DALLAS, TX 75219 |
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06/18/2024 11:41 AM
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