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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
18106350
Filing Dt:
02/06/2023
Publication #:
Pub Dt:
06/15/2023
Inventors:
Yu-Chang LIN, Chun-Feng NIEH, Huicheng CHANG, Yong-Yan LU, Hou-Yu CHEN
Title:
ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DEVICES
Assignment: 1
Reel/Frame:
062882/0659Recorded: 03/04/2023Pages: 5
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
11/03/2015
Exec Dt:
11/03/2015
Exec Dt:
11/03/2015
Exec Dt:
11/04/2015
Exec Dt:
11/04/2015
Assignee:
NO. 8 LI-HSIN RD. 6, SCIENCE BASED INDUSTRIAL PARK
HSINCHU, TAIWAN 300
Correspondent:
MCDERMOTT WILL & EMERY LLP
500 NORTH CAPITOL STREET, NW
WASHINGTON, DC 20020

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