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Patent Assignment Abstract of Title
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Total Assignments: 1
Patent #:
NONE
Issue Dt:
Application #:
17730189
Filing Dt:
04/27/2022
Publication #:
Pub Dt:
08/17/2023
Inventors:
SEUNGCHUL LEE, YOUNGCHUL CHOI, CHAOHSIN HUANG
Title:
FABRICATION METHOD OF FORMING SILICON CARBIDE MOSFET
Assignment: 1
Reel/Frame:
059747/0889Recorded: 04/27/2022Pages: 3
Conveyance:
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Assignors:
Exec Dt:
01/04/2022
Exec Dt:
01/04/2022
Exec Dt:
01/04/2022
Assignee:
NO. 24, GANGSHAN N. RD., GANGSHAN DIST.
KAOHSIUNG CITY, TAIWAN 820115
Correspondent:
BYIP LTD.
5465 LEGACY DRIVE, SUITE 650
PLANO, TX 75024

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