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Patent Assignment Details
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Reel/Frame:006854/0630   Pages: 2
Recorded: 01/25/1994
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
12/27/1994
Application #:
08186766
Filing Dt:
01/25/1994
Title:
METHOD OF FABRICATING HIGH VOLTAGE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR TRANSISTORS
Assignor
1
Exec Dt:
01/14/1994
Assignee
1
NO. 3 INDUSTRY E. ROAD IIT
SCIENCE-BASED INDUSTRIAL PARK
HSINCHU CITY, TAIPEI, TAIWAN R.O.C.
Correspondence name and address
DON A. HOLLINGSWORTH
LADAS & PARRY
5670 WILSHIRE BLVD.
STE. 2100
LOS ANGELES, CA 90036

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