Patent Assignment Details
NOTE:Results display only for issued patents and published applications.
For pending or abandoned applications please consult USPTO staff.
|
| Reel/Frame: | 013741/0163 | |
| Pages: | 10 |
| | Recorded: | 06/17/2003 | | |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
|
|
Total properties:
5
|
|
|
|
Patent #:
|
|
Issue Dt:
|
03/18/2003
|
Application #:
|
09433969
|
Filing Dt:
|
11/04/1999
|
|
Publication #:
|
|
Pub Dt:
|
06/13/2002
| | | | |
|
Title:
|
ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRODE FORMING METHOD
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
01/07/2003
|
Application #:
|
09527212
|
Filing Dt:
|
03/16/2000
|
|
Title:
|
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
|
|
|
|
|
Patent #:
|
|
Issue Dt:
|
04/15/2003
|
Application #:
|
09560337
|
Filing Dt:
|
04/28/2000
|
|
Publication #:
|
|
Pub Dt:
|
04/24/2003
| | | | |
|
Title:
|
METHOD FOR FORMING A REFRACTORY-METAL-SILICIDE LAYER IN A SEMICONDUCTOR DEVICE
|
|
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
09756744
|
Filing Dt:
|
01/10/2001
|
|
Publication #:
|
|
Pub Dt:
|
10/25/2001
| | | | |
|
Title:
|
METHOD OF FORMING N-CHANNEL AND P-CHANNEL MOS FIELD EFFECT TRANSISTORS OVER A SINGLE SEMICONDUCTOR SUBSTRATE
|
|
|
|
|
Patent #:
|
NONE
|
Issue Dt:
|
|
Application #:
|
09953267
|
Filing Dt:
|
09/17/2001
|
|
Publication #:
|
|
Pub Dt:
|
01/31/2002
| | | | |
|
Title:
|
Flash memory and methods of writing and erasing the same as well as a method of forming the same
|
|
|
Assignee
|
|
|
|
|
| 1753 SHIMONUMABE |
| NAKAHARA-KU, KAWASAKI |
| KANAGAWA 211-8668, JAPAN |
|
|
Correspondence name and address
|
| |
BENIOT CASTEL
|
| |
YOUNG & THOMPSON
|
| |
745 SOUTH 23RD, SECOND FLOOR
|
| |
ARLINGTON, VA 22202
|
| |
MILWAUKEE, WI 53201
|
Search Results as of:
05/02/2024 06:48 AM
If you have any comments or questions concerning the data displayed,
contact
PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified:
August 25, 2017 v.2.6
|
