Patent Assignment Details
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| Reel/Frame: | 021179/0868 | |
| Pages: | 3 |
| | Recorded: | 06/18/2008 | | |
| Attorney Dkt #: | 2557-001006/US |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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NONE
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Issue Dt:
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Application #:
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12213329
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Filing Dt:
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06/18/2008
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Publication #:
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Pub Dt:
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03/26/2009
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Title:
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Method of forming silicon nitride at low temperature, charge trap memory device including crystalline nano dots formed by using the same, and method of manufacturing the charge trap memory device
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Assignees
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| 416 MAETAN-DONG, YEONGTONG-GU |
| SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF |
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| SAN 4-2 BONGCHEON-DONG, GWANAK-GU |
| SEOUL, KOREA, REPUBLIC OF |
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Correspondence name and address
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HARNESS, DICKEY & PIERCE, P.L.C
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P.O. BOX 8910
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RESTON, VA 20195
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