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Reel/Frame:024756/0690   Pages: 2
Recorded: 07/28/2010
Attorney Dkt #:039.0129
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
09/30/2014
Application #:
12864874
Filing Dt:
07/28/2010
Publication #:
Pub Dt:
12/23/2010
Title:
III-Nitride Single-Crystal Ingot, III-Nitride Single-Crystal Substrate, Method of Manufacturing III-Nitride Single-Crystal Ingot, and Method of Manufacturing III-Nitride Single-Crystal Substrate
Assignors
1
Exec Dt:
06/23/2010
2
Exec Dt:
06/24/2010
3
Exec Dt:
06/25/2010
Assignee
1
5-33 KITAHAMA 4-CHOME, CHUO-KU
OSAKA, JAPAN 541-0041
Correspondence name and address
JUDGE PATENT ASSOCIATES
6-3 NISHITEMMA 4-CHOME, KITA-KU
VERT NAKANOSHIMA KITA, NO. 503
OSAKA, 530-0047 JAPAN

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