Patent Assignment Details
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| Reel/Frame: | 028279/0001 | |
| Pages: | 4 |
| | Recorded: | 05/29/2012 | | |
| Attorney Dkt #: | 27231-26A |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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11/05/2013
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Application #:
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13482071
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Filing Dt:
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05/29/2012
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Publication #:
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Pub Dt:
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11/08/2012
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Title:
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METHOD FOR REDUCING THICKNESS OF INTERFACIAL LAYER, METHOD FOR FORMING HIGH DIELECTRIC CONSTANT GATE INSULATING FILM, HIGH DIELECTRIC CONSTANT GATE INSULATING FILM, HIGH DIELECTRIC CONSTANT GATE OXIDE FILM, AND TRANSISTOR HAVING HIGH DIELECTRIC CONSTANT GATE OXIDE
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Assignee
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| 2-1, SENGEN 1-CHOME |
| TSUKUBA-SHI, IBARAKI, JAPAN 305-0047 |
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Correspondence name and address
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JOHN L. CORDANI
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50 LEAVENWORTH STREET
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P.O. BOX 1110
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WATERBURY, CT 06721-1110
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