Patent Assignment Details
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| Reel/Frame: | 032000/0420 | |
| Pages: | 4 |
| | Recorded: | 01/17/2014 | | |
| Attorney Dkt #: | AI-849 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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11/17/2015
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Application #:
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14158707
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Filing Dt:
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01/17/2014
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Publication #:
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Pub Dt:
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07/31/2014
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Title:
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N-CHANNEL DOUBLE DIFFUSION MOS TRANSISTOR WITH P-TYPE BURIED LAYER UNDER N-TYPE DRIFT LAYER, AND SEMICONDUCTOR COMPOSITE DEVICE
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Assignee
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| 21, SAIIN MIZOSAKI-CHO, UKYO-KU, KYOTO-SHI |
| KYOTO, JAPAN 615-8585 |
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Correspondence name and address
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RABIN & BERDO, P.C.
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1101 14TH ST., N.W., SUITE 500
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WASHINGTON, DC 20005
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