skip navigationU S P T O SealUnited States Patent and Trademark Office AOTW logo
Home|Site Index|Search|Guides|Contacts|eBusiness|eBiz alerts|News|Help
Assignments on the Web > Patent Query
Patent Assignment Details
NOTE:Results display only for issued patents and published applications. For pending or abandoned applications please consult USPTO staff.

Reel/Frame:037869/0437   Pages: 5
Recorded: 03/02/2016
Attorney Dkt #:035532-0101
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 20
1
Patent #:
Issue Dt:
11/30/2004
Application #:
10106693
Filing Dt:
03/26/2002
Publication #:
Pub Dt:
11/28/2002
Title:
PROCESS FOR PRODUCING GALLIUM NITRIDE CRYSTAL SUBSTRATE, AND GALLIUM NITRIDE CRYSTAL SUBSTRATE
2
Patent #:
Issue Dt:
06/06/2006
Application #:
10752092
Filing Dt:
01/07/2004
Publication #:
Pub Dt:
05/05/2005
Title:
III-V GROUP NITRIDE SYSTEM SEMICONDUCTOR SUBSTRATE
3
Patent #:
Issue Dt:
05/08/2007
Application #:
10964819
Filing Dt:
10/15/2004
Publication #:
Pub Dt:
04/20/2006
Title:
SI-DOPED GAAS SINGLE CRYSTAL SUBSTRATE
4
Patent #:
Issue Dt:
02/24/2009
Application #:
11070162
Filing Dt:
03/03/2005
Publication #:
Pub Dt:
06/15/2006
Title:
VAPOR PHASE GROWTH APPARATUS
5
Patent #:
Issue Dt:
09/11/2007
Application #:
11071589
Filing Dt:
03/04/2005
Publication #:
Pub Dt:
09/22/2005
Title:
GRINDING ABRASIVE GRAINS, ABRASIVE, ABRASIVE SOLUTION, ABRASIVE SOLUTION PREPARATION METHOD, GRINDING METHOD, AND SEMICONDUCTOR DEVICE FABRICATION METHOD
6
Patent #:
Issue Dt:
03/25/2008
Application #:
11179781
Filing Dt:
07/13/2005
Publication #:
Pub Dt:
10/12/2006
Title:
METHOD OF MAKING NITRIDE-BASED COMPOUND SEMICONDUCTOR CRYSTAL AND SUBSTRATE
7
Patent #:
Issue Dt:
09/18/2007
Application #:
11312634
Filing Dt:
12/21/2005
Publication #:
Pub Dt:
03/08/2007
Title:
GROUP III-V NITRIDE-BASED SEMICONDUCTOR SUBSTRATE AND METHOD OF MAKING SAME
8
Patent #:
Issue Dt:
03/23/2010
Application #:
11359528
Filing Dt:
02/23/2006
Publication #:
Pub Dt:
08/31/2006
Title:
LIGHT EMITTING DIODE AND METHOD FOR FABRICATING SAME
9
Patent #:
Issue Dt:
03/09/2010
Application #:
11431106
Filing Dt:
05/10/2006
Publication #:
Pub Dt:
11/30/2006
Title:
III GROUP NITRIDE SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND FABRICATION METHODS THEREOF
10
Patent #:
Issue Dt:
08/04/2009
Application #:
11497379
Filing Dt:
08/02/2006
Publication #:
Pub Dt:
04/05/2007
Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE
11
Patent #:
Issue Dt:
06/01/2010
Application #:
11538638
Filing Dt:
10/04/2006
Publication #:
Pub Dt:
10/25/2007
Title:
NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, METHOD OF MAKING THE SAME AND EPITAXIAL SUBSTRATE FOR NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE
12
Patent #:
Issue Dt:
01/19/2010
Application #:
11541790
Filing Dt:
10/03/2006
Publication #:
Pub Dt:
12/20/2007
Title:
NITRIDE SEMICONDUCTOR FREE-STANDING SUBSTRATE
13
Patent #:
Issue Dt:
01/26/2010
Application #:
11848709
Filing Dt:
08/31/2007
Publication #:
Pub Dt:
04/10/2008
Title:
LIGHT EMITTING DIODE
14
Patent #:
Issue Dt:
08/31/2010
Application #:
11902964
Filing Dt:
09/26/2007
Publication #:
Pub Dt:
01/01/2009
Title:
FIELD-EFFECT TRANSISTOR AND METHOD OF MAKING SAME
15
Patent #:
Issue Dt:
02/16/2010
Application #:
12318104
Filing Dt:
12/22/2008
Publication #:
Pub Dt:
05/07/2009
Title:
VAPOR PHASE GROWTH APPARATUS
16
Patent #:
Issue Dt:
07/19/2011
Application #:
12332876
Filing Dt:
12/11/2008
Publication #:
Pub Dt:
04/16/2009
Title:
GROUP III-V NITRIDE-BASED SEMICONDUCTOR SUBSTRATE, GROUP III-V NITRIDE-BASED DEVICE AND METHOD OF FABRICATING THE SAME
17
Patent #:
Issue Dt:
01/07/2014
Application #:
12413992
Filing Dt:
03/30/2009
Publication #:
Pub Dt:
06/03/2010
Title:
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE PRODUCTION METHOD, AND GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
18
Patent #:
Issue Dt:
06/26/2012
Application #:
12512549
Filing Dt:
07/30/2009
Publication #:
Pub Dt:
11/26/2009
Title:
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE, SUBSTRATE FOR GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING SAME
19
Patent #:
Issue Dt:
07/03/2012
Application #:
12692754
Filing Dt:
01/25/2010
Publication #:
Pub Dt:
03/10/2011
Title:
EPITAXIAL WAFER, LIGHT-EMITTING ELEMENT, METHOD OF FABRICATING EPITAXIAL WAFER AND METHOD OF FABRICATING LIGHT-EMITTING ELEMENT
20
Patent #:
Issue Dt:
03/22/2016
Application #:
14582728
Filing Dt:
12/24/2014
Publication #:
Pub Dt:
07/09/2015
Title:
NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE SEMICONDUCTOR DEVICE
Assignor
1
Exec Dt:
01/20/2016
Assignee
1
27-1, SHINKAWA 2-CHOME
CHUO-KU, TOKYO, JAPAN 104-8260
Correspondence name and address
FOLEY & LARDNER LLP
3000 K STREET NW
WASHINGTON, DC 20007

Search Results as of: 05/10/2024 11:50 AM
If you have any comments or questions concerning the data displayed, contact PRD / Assignments at 571-272-3350. v.2.6
Web interface last modified: August 25, 2017 v.2.6
| .HOME | INDEX| SEARCH | eBUSINESS | CONTACT US | PRIVACY STATEMENT