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Reel/Frame:039624/0495   Pages: 8
Recorded: 09/02/2016
Attorney Dkt #:3635-13242(PA99430US/WNTK
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 1
1
Patent #:
Issue Dt:
06/19/2018
Application #:
15176925
Filing Dt:
06/08/2016
Publication #:
Pub Dt:
12/22/2016
Title:
"METHOD FOR MANUFACTURING A HIGH-RESISTIVITY SEMICONDUCTOR- ON-INSULATOR SUBSTRATE INCLUDING AN RF CIRCUIT OVERLAPPING A DOPED REGION IN THE SUBSTRATE"
Assignors
1
Exec Dt:
08/08/2016
2
Exec Dt:
08/04/2016
3
Exec Dt:
08/25/2016
Assignee
1
CHEMIN DES FRANQUES
PARC TECHNOLOGIQUE DES FONTAINES
BERNIN, FRANCE 38190
Correspondence name and address
TRASKBRITT, P.C.
P.O. BOX 2550
SALT LAKE CITY, UT 84110

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