Patent Assignment Details
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| Reel/Frame: | 049076/0656 | |
| Pages: | 10 |
| | Recorded: | 05/03/2019 | | |
| Attorney Dkt #: | 18264/003002 |
| Conveyance: | ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). |
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Total properties:
1
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Patent #:
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Issue Dt:
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09/10/2019
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Application #:
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15860422
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Filing Dt:
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01/02/2018
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Publication #:
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Pub Dt:
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05/24/2018
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Title:
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METHOD FOR FABRICATING HIGH-VOLTAGE INSULATED GATE TYPE BIPOLAR SEMICONDUCTOR DEVICE
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Assignee
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| 1-1, SENSUI-CHO, TOBATA-KU, KITAKYUSHU-SHI |
| FUKUOKA, JAPAN 804-8550 |
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Correspondence name and address
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YUICHI WATANABE
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909 FANNIN ST
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SUITE 3500
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HOUSTON, TX 77010
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