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Patent Assignment Details

NOTE:Results display only for issued patents and published applications. For pending or abandoned applications please consult USPTO staff.

Total properties: 11

Patent #:	8520433	Issue Dt:	08/27/2013	Application #:	13623405	Filing Dt:	09/20/2012
Title:	MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Patent #:	8680633	Issue Dt:	03/25/2014	Application #:	13826408	Filing Dt:	03/14/2013
Publication #:	US20140084401	Pub Dt:	03/27/2014
Title:	MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Patent #:	8878324	Issue Dt:	11/04/2014	Application #:	14168627	Filing Dt:	01/30/2014
Publication #:	US20140145279	Pub Dt:	05/29/2014
Title:	MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Patent #:	10388544	Issue Dt:	08/20/2019	Application #:	14626277	Filing Dt:	02/19/2015
Publication #:	US20150162223	Pub Dt:	06/11/2015
Title:	SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Patent #:	10269866	Issue Dt:	04/23/2019	Application #:	15010669	Filing Dt:	01/29/2016
Publication #:	US20160148975	Pub Dt:	05/26/2016
Title:	MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Patent #:	10496546	Issue Dt:	12/03/2019	Application #:	15257163	Filing Dt:	09/06/2016
Publication #:	US20160371189	Pub Dt:	12/22/2016
Title:	CACHE MEMORY AND PROCESSOR SYSTEM

Patent #:	10103321	Issue Dt:	10/16/2018	Application #:	15259525	Filing Dt:	09/08/2016
Publication #:	US20160380185	Pub Dt:	12/29/2016
Title:	MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

Patent #:	10642685	Issue Dt:	05/05/2020	Application #:	15262218	Filing Dt:	09/12/2016
Publication #:	US20160378592	Pub Dt:	12/29/2016
Title:	CACHE MEMORY AND PROCESSOR SYSTEM

Patent #:	NONE	Issue Dt:		Application #:	15262635	Filing Dt:	09/12/2016
Publication #:	US20160378671	Pub Dt:	12/29/2016
Title:	WORD ACCESSIBLE CACHE MEMORY AND LINE ACCESSIBLE CACHE MEMORY, EACH CACHE HAVING DIFFERENT ACCESS CHARACTERISTICS BOTH POSITIONED IN SAME CACHE LAYER

Patent #:	10528270	Issue Dt:	01/07/2020	Application #:	15456209	Filing Dt:	03/10/2017
Publication #:	US20180081570	Pub Dt:	03/22/2018
Title:	MEMORY SYSTEM HAVING NONVOLATILE MEMORY AND VOLATILE MEMORY AND PROCESSOR SYSTEM

Assignor

Exec Dt:

10/01/2019

Assignee

1-21, SHIBAURA 3-CHOME

MINATO-KU, TOKYO, JAPAN

Correspondence name and address
	JOHN M MULCAHY
	901 NEW YORK AVE, NW
	WASHINGTON, DC 20001

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