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Reel/Frame:062486/0470   Pages: 6
Recorded: 01/25/2023
Attorney Dkt #:10263.0003-03~09
Conveyance: ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS).
Total properties: 7
1
Patent #:
9748260
Issue Dt:
08/29/2017
Application #:
14724853
Filing Dt:
05/29/2015
Publication #:
US20150372006
Pub Dt:
12/24/2015
Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
2
Patent #:
10211219
Issue Dt:
02/19/2019
Application #:
15666653
Filing Dt:
08/02/2017
Publication #:
US20170338244
Pub Dt:
11/23/2017
Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
3
Patent #:
10916559
Issue Dt:
02/09/2021
Application #:
16245271
Filing Dt:
01/11/2019
Publication #:
US20190148404
Pub Dt:
05/16/2019
Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
4
Patent #:
11362106
Issue Dt:
06/14/2022
Application #:
17141504
Filing Dt:
01/05/2021
Publication #:
US20210126011
Pub Dt:
04/29/2021
Title:
MANUFACTURING METHOD OF A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
5
Patent #:
11374021
Issue Dt:
06/28/2022
Application #:
17141534
Filing Dt:
01/05/2021
Publication #:
US20210126012
Pub Dt:
04/29/2021
Title:
MANUFACTURING METHOD OF A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
6
Patent #:
11903205
Issue Dt:
02/13/2024
Application #:
17744571
Filing Dt:
05/13/2022
Publication #:
US20220302166
Pub Dt:
09/22/2022
Title:
METHOD FOR READING DATA OF A FIRST MEMORY CELL TRANSISTOR OF A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
7
Patent #:
11903207
Issue Dt:
02/13/2024
Application #:
17750207
Filing Dt:
05/20/2022
Publication #:
US20220328517
Pub Dt:
10/13/2022
Title:
Method for writing data of a first memory cell transistor of a nonvolatile semiconductor memory device
Assignors
1
KITO, MASARU
Exec Dt:
11/28/2006
2
KIDOH, MASARU
Exec Dt:
11/28/2006
3
KATSUMATA, RYOTA
Exec Dt:
11/28/2006
4
TANAKA, HIROYASU
Exec Dt:
11/28/2006
5
SATO, MITSURU
Exec Dt:
11/28/2006
6
FUKUZUMI, YOSHIAKI
Exec Dt:
11/28/2006
7
MATSUOKA, YASUYUKI
Exec Dt:
11/28/2006
Assignee
1
KABUSHIKI KAISHA TOSHIBA
1-1, SHIBAURA 1-CHOME
MINATO-KU, TOKYO, JAPAN
Correspondence name and address
JOHN M MULCAHY
901 NEW YORK AVE, NW
WASHINGTON, DC 20001

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